Download Handbook of Silicon Based MEMS Materials and Technologies by Markku Tilli, Veikko Lindroos, Veli-Matti Airaksinen, Sami PDF

By Markku Tilli, Veikko Lindroos, Veli-Matti Airaksinen, Sami Franssila, Mervi Paulasto-Krockel, Ari Lehto, Teruaki Motooka

A complete advisor to MEMS fabrics, applied sciences and production, analyzing the cutting-edge with a specific emphasis on present and destiny functions. Key issues lined comprise: Silicon as MEMS fabric fabric houses and size strategies Analytical equipment utilized in fabrics characterization Modeling in MEMS Measuring MEMS Micromachining applied sciences in MEMS Encapsulation of MEMS parts rising technique applied sciences, together with ALD and porous silicon Written via seventy three international category MEMS members from around the world, this quantity covers fabrics choice in addition to an important approach steps in bulk micromachining, enjoyable the desires of machine layout engineers and technique or improvement engineers operating in production techniques. It additionally offers a complete reference for the economic R&D and educational groups. Veikko Lindroos is Professor of actual Metallurgy and fabrics technology at Helsinki college of expertise, Finland. Markku Tilli is Senior vp of study at Okmetic, Vantaa, Finland. Ari Lehto is Professor of Silicon know-how at Helsinki collage of expertise, Finland. Teruaki Motooka is Professor on the division of fabrics technology and Engineering, Kyushu collage, Japan. . offers important packaging applied sciences and procedure wisdom for silicon direct bonding, anodic bonding, glass frit bonding, and similar innovations. indicates how you can defend units from the surroundings and reduce package deal dimension for dramatic relief of packaging expenditures. Discusses homes, education, and progress of silicon crystals and wafers. Explains the numerous homes (mechanical, electrostatic, optical, etc), production, processing, measuring (incl. targeted beam techniques), and multiscale modeling tools of MEMS constructions

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Handbook of Silicon Based MEMS Materials and Technologies (Micro and Nano Technologies)

A complete advisor to MEMS fabrics, applied sciences and production, analyzing the cutting-edge with a specific emphasis on present and destiny functions. Key issues lined contain: Silicon as MEMS fabric fabric houses and dimension strategies Analytical equipment utilized in fabrics characterization Modeling in MEMS Measuring MEMS Micromachining applied sciences in MEMS Encapsulation of MEMS elements rising approach applied sciences, together with ALD and porous silicon Written by means of seventy three global type MEMS individuals from all over the world, this quantity covers fabrics choice in addition to crucial procedure steps in bulk micromachining, pleasurable the wishes of machine layout engineers and strategy or improvement engineers operating in production techniques.

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1 Miller Index (hkl) System A convenient way to describe atomic planes and direc­ tions in the crystal lattice is to use Miller indexes. When the lattice has maximum symmetry, or is cubic (as the silicon lattice is)—that is, the lattice axes are orthogo­ nal and the lattice parameters in all directions x,y,z CHAPTER 1 are identical—the Miller notation is easy to use and is described later. 2). 2a the plane intercepts the x-axis at a distance a from the origin and is parallel to the y- and z-axes, or intercepts them at �.

Once the upper yield strength (also called upper yield point) is achieved, dislocations start to gener­ ate, multiply, and move on slip planes, the stress lowers to the lower yield strength (point), and plastic deforma­ tion proceeds. When the dislocation density is increasing, dislocations reach each other, slip is prevented, the lat­ tice hardens, and stress required for further deformation is increased, until fracture occurs. 9). 10 [17]. At 900°C, the critical shear stress on the (111) plane required to move dislocations is about 8 MPa.

A large oxygen pre­ cipitate may generate stacking fault(s) to reduce misfit stresses. Wet oxidation of silicon wafer also may induce stacking faults. Intrinsic stacking faults can be found, for instance, in epitaxial layers. Although the largest stacking faults in wafers can extend over several hun­ dred μm’s, typically the diameter is less than 100 μm. Volume defects in silicon are precipitates. They can be coherent (the lattice of the precipitate is aligned with the host silicon lattice), or non-coherent, when there is a mismatch in lattice alignment.

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